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Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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50V 350mA 18 W Mosfet Power Transistor LDMOS MRF6V3090NBR1 22dB

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Shenzhen Koben Electronics Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-23816068

Contact Person:
Mr.Zhu
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50V 350mA 18 W Mosfet Power Transistor LDMOS MRF6V3090NBR1 22dB

Brand Name Freescale
Model Number MRF6V3090NBR5
Certification IEC
Place of Origin USA
Minimum Order Quantity 1 piece
Price negotiable
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000 pieces per year
Delivery Time 1-2 working days
Packaging Details factory standard packing
Condition 100% Brand New Product
Part Status Not For New Designs
Package TO272
Lead Free Status / RoHS Status Compliant
Output Power 18W
Voltage 50V
Detailed Product Description

MRF6V3090NBR1 RF Mosfet LDMOS 50V 350mA 860MHz 22dB 18W TO-272 WB-4

 

Designed for broadcast and commercial aerospace broadband applications with frequencies from 470 to 1215 MHz.

 

Features

1, Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power

2, Characterized with Series Equivalent Large--Signal Impedance Parameters

3, Internally Input Matched for Ease of Use

4, Qualified Up to a Maximum of 50 VDD Operation

5, Integrated ESD Protection

6, Excellent Thermal Stability

7, Greater Negative Gate--Source Voltage Range for Improved Class C Operation

 

Transistor TypeLDMOS 
Frequency860MHz 
Gain22dB 
Voltage - Test50V 
Current Rating- 
Noise Figure- 
Current - Test350mA 
Power - Output18W 
Voltage - Rated110V 
Package / CaseTO-272BB 
Supplier Device PackageTO-272 WB-4 
Base Part NumberMRF6V3090

 

 

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Product Tags: high power mosfet transistors   n channel transistor  
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