China Integrated Circuit IC Chip manufacturer
Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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irf540npbf mosfet transistor

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Shenzhen Koben Electronics Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-23816068

Contact Person:
Mr.Zhu
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irf540npbf mosfet transistor

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IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET Applications l High frequency DC-DC converters l TO-220 is available in ... 2024-12-09 18:59:29
IRFP260NPBF N-Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic ... 2024-12-09 18:59:29
BLF178XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power ... 2024-12-09 12:12:55
RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES • High power and High Gain: Pout>100W, Gp>11... 2024-12-09 12:12:55
BLF178XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power ... 2024-12-09 18:59:29
BLF174XR RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28.5dB 600W SOT1214A 600 W extremely rugged LDMOS power transistor for broadcast and ... 2024-12-09 18:59:29
MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance ... 2024-12-09 18:59:29
RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES • High power and High Gain: Pout>100W, Gp>11... 2024-12-09 18:59:29
RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor ... 2024-12-09 12:12:55
RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor ... 2024-12-09 18:59:29
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