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irf540npbf mosfet power transistor
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IRF540NPBF MOSFET TRANSISTOR 100V 33A 44mOhm List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND EP20K100EFC324-2 ...
2024-12-09 17:18:52
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IRF540NPBF MOSFET TRANSISTOR 100V 33A 44mOhm List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND EP20K100EFC324-2 ...
2024-12-09 18:59:29
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power ...
2024-12-09 12:12:55
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power ...
2024-12-09 18:59:29
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...MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain ...
2024-12-09 18:59:29
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IRFR024NTRPBF D-PAK N-Channel 55V 17A 45W Surface Mount RoHS Compliant Feature l Ultra Low On-Resistance l Surface Mount (IRFR024N) l Straight Lead ...
2024-12-09 18:59:29
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FGH60N60SMD 600V 60A Field Stop IGBT Power Transistor Features • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy ...
2024-12-09 18:59:29
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...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V ...
2024-12-09 12:12:55
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...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V ...
2024-12-09 18:59:29
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... in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate ...
2024-12-09 18:59:29
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