Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A
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Detailed Product Description
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FGH60N60SMD 600V 60A Field Stop IGBT Power Transistor
Features • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A • High input impedance • Fast switching • Tighten Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential.
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| Product Tags: mosfet power module diode bridge module IGBT Power Transistor 600V 60A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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