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chassis mount mosfet power module
Selling leads
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Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A ...
2024-12-09 12:12:55
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Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A ...
2024-12-09 18:59:29
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...Power - Max 2270W Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 300A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 30nF @ 10V Input ...
2024-12-09 12:12:55
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...Power - Max 2270W Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 300A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 30nF @ 10V Input ...
2024-12-09 18:59:29
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...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG...
2024-12-09 12:12:55
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...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG...
2024-12-09 18:59:29
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... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate ...
2024-12-09 12:12:55
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... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate ...
2024-12-09 18:59:29
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...MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central ...
2024-12-09 18:59:29
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...MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated ...
2024-12-09 18:59:29
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