High Performance IGBT Power Module 2270W 1mA Half Bridge Configuration

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Shenzhen Koben Electronics Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-23816068

Contact Person:
Mr.Zhu View Contact Details

Detailed Product Description

Part Status	Active
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	300A
Power - Max	2270W
Vce(on) (Max) @ Vge, Ic	2.25V @ 15V, 300A
Current - Collector Cutoff (Max)	1mA
Input Capacitance (Cies) @ Vce	30nF @ 10V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Product Tags: mosfet power module high power igbt module IGBT Power Module 2270W

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