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n channel mosfet transistor
Selling leads
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HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with ...
2024-12-09 18:45:20
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HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on)
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 21:52:33
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...Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The ...
2024-12-09 18:42:28
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...Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The ...
2024-12-09 21:52:33
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 18:45:20
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 18:45:20
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... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching ...
2024-12-09 18:45:20
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 21:52:33
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