Shenzhen Hua Xuan Yang Electronics Co.,Ltd: Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price

Home > Products >

mosfet driver using transistor

Browse Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

281 - 290 of 294

mosfet driver using transistor

Selling leads

HXY4410 N Type Transistor Load Switching For Portable Applications

60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m Ω (VGS = 10V) RDS(ON) < 19m Ω (VGS = 4.5V) General Description ... 2024-12-09 18:42:28

HXY4410 N Type Transistor Load Switching For Portable Applications

60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m Ω (VGS = 10V) RDS(ON) < 19m Ω (VGS = 4.5V) General Description ... 2024-12-09 21:52:33

HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS = 4.5V) < 30mΩ RDS(ON) (at VGS ... 2024-12-09 18:42:28

HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS = 4.5V) < 15.5mΩ General ... 2024-12-09 18:42:28

HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS = 4.5V) < 30mΩ RDS(ON) (at VGS ... 2024-12-09 21:52:33

HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS = 4.5V) < 15.5mΩ General ... 2024-12-09 21:52:33

TIP112 Field Effect Transistor , High Frequency Transistor

TO-220-3L Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low ... 2024-12-09 18:42:28

TIP112 Field Effect Transistor , High Frequency Transistor

TO-220-3L Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low ... 2024-12-09 21:52:33

TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

TO-220-3L Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low ... 2024-12-09 18:42:28

TIP110 High Voltage NPN Power Transistor Low Equivalent On Resistance

TO-220-3L Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low ... 2024-12-09 21:52:33

Page 29 of 30 : |< << 20 21 22 23 24 25 26 27 28 29 30 >> >|