251 - 260 of 294
mosfet driver using transistor
Selling leads
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SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 18:42:28
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60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS HXY3400 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 21:52:33
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...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to...
2024-12-09 18:44:10
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...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to...
2024-12-09 18:44:10
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...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to...
2024-12-09 18:44:10
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...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to...
2024-12-09 18:44:10
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...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to...
2024-12-09 21:52:33
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...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to...
2024-12-09 21:52:33
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