China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

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Mr.David Lee
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high power zener diode

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QM4803D​ N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ... 2024-12-09 18:42:28
TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ ... 2024-12-09 18:42:28
QM4803D​ N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ... 2024-12-09 21:52:33
TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ ... 2024-12-09 21:52:33
TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green ... 2024-12-09 18:42:28
SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding ... 2024-12-09 18:42:28
TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green ... 2024-12-09 21:52:33
SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ... 2024-12-09 18:42:28
60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ... 2024-12-09 21:52:33
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