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2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

Place of Origin	ShenZhen China
Brand Name	Hua Xuan Yang
Certification	RoHS、SGS
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Packaging Details	Boxed
Delivery Time	1 - 2 Weeks
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Model Number	2N5401
VCBO	-160V
VCEO	-150V
VEBO	-5V
Usage	Electronic Components
Tj	150Š
Case	Tape/Tray/Reel

Detailed Product Description

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP)

FEATURE

Ÿ Switching and Amplification in High Voltage

Ÿ Applications such as Telephony

Ÿ Low Current

Ÿ High Voltage

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
2N5401	TO-92	Bulk	1000pcs/Bag
2N5401-TA	TO-92	Tape	2000pcs/Box

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-160	V
VCEO	Collector-Emitter Voltage	-150	V
VEBO	Emitter-Base Voltage	-5	V
I_C	Collector Current	-0.6	A
P_C	Collector Power Dissipation	625	mW
R0 JA	Thermal Resistance From Junction To Ambient	200	Š / W
T_j	Junction Temperature	150	Š
Tstg	Storage Temperature	-55~+150	Š

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C= -0.1mA,I_E=0	-160			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=-1mA,I_B=0	-150			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=-0.01mA,I_C=0	-5			V
Collector cut-off current	ICBO	V_CB=-120V,I_E=0			-50	nA
Emitter cut-off current	IEBO	V_EB=-3V,I_C=0			-50	nA
DC current gain	hFE(1)	V_CE=-5V, I_C=-1mA	80
	hFE(2)	V_CE=-5V, I_C=-10mA	100		300
	hFE(3)	V_CE=-5V, I_C=-50mA	50
Collector-emitter saturation voltage	VCE(sat)	I_C=-50mA,I_B=-5mA			-0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C=-50mA,I_B=-5mA			-1	V
Transition frequency	f_T	V_CE=-5V,I_C=-10mA, f =30MHz	100		300	MHz

CLASSIFICATION OF h_FE(2)

RANK	A	B	C
RANGE	100-150	150-200	200-300

Typical Characteristics

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	3.300	3.700	0.130	0.146
A1	1.100	1.400	0.043	0.055
b	0.380	0.550	0.015	0.022
c	0.360	0.510	0.014	0.020
D	4.300	4.700	0.169	0.185
D1	3.430		0.135
E	4.300	4.700	0.169	0.185
e	1.270 TYP		0.050 TYP
e1	2.440	2.640	0.096	0.104
L	14.100	14.500	0.555	0.571
0		1.600		0.063
h	0.000	0.380	0.000	0.015

TO-92 7DSH DQG 5HHO

Product Tags: high frequency transistor power switch transistor

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2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

2N5401 High Power PNP Transistor VCBO -160V For Electronic Components

CLASSIFICATION OF hFE(2)

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MMBD1501A High Current Transistor , Power Switch Transistor Low Leakage

BAW56/BAV70/BAV9 Silicon Power Transistor For General Purpose Switching

BAV19W~BAV21W Field Effect Transistor , High Frequency Transistor

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CLASSIFICATION OF h_FE(2)