China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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high power pnp transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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high power pnp transistor

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...Transistors MMBT4403 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter ... 2024-12-09 18:42:28
...Transistors MMBT4403 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter ... 2024-12-09 21:52:33
... high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST3078 ... 2024-12-09 18:42:28
... high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST3078 ... 2024-12-09 21:52:33
TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green ... 2024-12-09 18:42:28
AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide ... 2024-12-09 19:03:13
AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide ... 2024-12-09 21:52:33
TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ... 2024-12-09 18:42:28
60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ... 2024-12-09 21:52:33
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