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MMBT4403 NPN High Speed Switching Transistor High Performance

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

Place of Origin	ShenZhen China
Brand Name	Hua Xuan Yang
Certification	RoHS、SGS
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Packaging Details	Boxed
Delivery Time	1 - 2 Weeks
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Model Number	MMBT4403
FEATURE	Low Leakage
Power mosfet transistor	SOT-23 Plastic-Encapsulate Transistors
Product ID	MMBT4403
Type	Switching Diodesod

Detailed Product Description

SOT-23 Plastic-Encapsulate Transistors MMBT4403 TRANSISTOR (NPN)

FEATURE

Switching Transistor

Marking :2T

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-40	V
VCEO	Collector-Emitter Voltage	-40	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current	-600	mA
PC	Collector Power Dissipation	300	mW
RΘJA	Thermal Resistance From Junction To Ambient	417	℃/W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-55～+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-100μA,I_E=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=-1mA,I_B=0	-40			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=-100μA ,I_C=0	-5			V
Collector cut-off current	ICBO	V_CB=-35V,I_E=0			-0.1	μA
Collector cut-off current	ICEX	VCE=-35V, VBE=0.4V			-0.1	μA
Emitter cut-off current	IEBO	V_EB=-4V,I_C=0			-0.1	μA
DC current gain	hFE1	V_CE=-1V, I_C=-0.1mA	30
	hFE2	V_CE=-1V, I_C=-1mA	60
	hFE3	V_CE=-1V, I_C=-10mA	100
	hFE4	V_CE=-2V, I_C=-150mA	100		300
	hFE5	V_CE=-2V, I_C=-500mA	20
Collector-emitter saturation voltage	VCE(sat)	I_C=-150mA,I_B=-15mA			-0.4	V
		I_C=-500mA,I_B=-50mA			-0.75	V
Base-emitter saturation voltage	VBE(sat)	I_C=-150mA,I_B=-15mA			-0.95	V
		I_C=-500mA,I_B=-50mA			-1.3	V
Transition frequency	f_T	V_CE=-10V, I_C=-20mA,f =100MHz	200			MHz
Delay time	t_d	VCC=-30V, VBE(off)=-0.5V IC=-150mA , IB1=-15mA			15	ns
Rise time	t_r				20	ns
Storage time	t_s	VCC=-30V, IC=-150mA IB1=IB2=-15mA			225	ns
Fall time	t_f				60	ns

Typical Characterisitics

Package Outline Dimensions

Product Tags: high frequency transistor power mosfet transistors

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