China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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high current transistor

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...form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS... 2024-12-09 18:42:28
...form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS... 2024-12-09 21:52:33
...3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V ... 2024-12-09 18:42:28
...Transistors B772M TRANSISTOR (PNP) FEATURES Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO ... 2024-12-09 18:42:28
...Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO ... 2024-12-09 18:42:28
...3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V ... 2024-12-09 21:52:33
...Transistors B772M TRANSISTOR (PNP) FEATURES Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO ... 2024-12-09 21:52:33
...Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO ... 2024-12-09 21:52:33
... 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z ... 2024-12-09 18:42:28
... < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z ... 2024-12-09 18:42:28
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