China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number B772M
VCBO -40V
VCEO -30V
Storage Temperature -55-150℃
Power mosfet transistor TO-251-3L Plastic-Encapsulate
Material Silicon
Type Triode Transistor
Detailed Product Description

TO-251-3L Plastic-Encapsulate Transistors  B772M TRANSISTOR (PNP)

 

 

FEATURES

 

Low Speed Switching

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
 

SymbolParameterValueUnit
VCBOCollector-Base Voltage-40V
VCEOCollector-Emitter Voltage-30V
VEBOEmitter-Base Voltage-6V
ICCollector Current -Continuous-3A
PCCollector Power Dissipation1.25W
RӨJAThermal Resistance, junction to Ambient100℃/W
TjJunction Temperature150
TstgStorage Temperature-55-150

 
 
 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-100μA ,IE=0-40  V
Collector-emitter breakdown voltageV(BR)CEOIC= -10mA , IB=0-30  V
Emitter-base breakdown voltageV(BR)EBOIE= -100μA,IC=0-6  V
Collector cut-off currentICBOVCB= -40V, IE=0  -1μA
Collector cut-off currentICEOVCE=-30V, IB=0  -10μA
Emitter cut-off currentIEBOVEB=-6V, IC=0  -1μA
DC current gainhFEVCE= -2V, IC= -1A60 400 
Collector-emitter saturation voltageVCE(sat)IC=-2A, IB= -0.2A  -0.5V
Base-emitter saturation voltageVBE(sat)IC=-2A, IB= -0.2A  -1.5V

 

Transition frequency

fT

VCE= -5V, IC=-0.1A

f =10MHz

 

50

 

80

 

 

MHz

 
  

CLASSIFICATION OF hFE(2)

RankROYGR
Range60-120100-200160-320200-400

 

 

 


Typical Characteristics

 

 
 

 

 

 

SymbolDimensions In MillimetersDimensions In Inches
Min.Max.Min.Max.
A2.2002.3800.0870.094
A10.0000.1000.0000.004
B0.8001.4000.0310.055
b0.7100.8100.0280.032
c0.4600.5600.0180.022
c10.4600.5600.0180.022
D6.5006.7000.2560.264
D15.1305.4600.2020.215
E6.0006.2000.2360.244
e2.286 TYP.0.090 TYP.
e14.3274.7270.1700.186
M1.778REF.0.070REF.
N0.762REF.0.018REF.
L9.80010.4000.3860.409
L12.9REF.0.114REF.
L21.4001.7000.0550.067
V4.830 REF.0.190 REF.
ĭ1.1001.3000.0430.0±1

 

 

 

 

 

 


 
 

 

Product Tags: tip series transistors   high power pnp transistor  
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