China Sapphire Substrate manufacturer
SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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ssp semiconductor substrate

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

Contact Person:
Mr.Wang
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ssp semiconductor substrate

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2inch N-type single side polished Ge wafers Germanium substrate Ge window for infrared Co2 lasers Diameter:25.4mm Thickness:0.325mm Shanghai Famous ... 2025-05-06 20:44:50
VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, --------------------... 2025-05-06 20:44:31
VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, --------------------... 2025-05-06 20:44:43
... to a silicon carbide (SiC) wafer with a 12-inch diameter (approximately 300mm), a size standard used in the semiconductor industry for the mass ... 2025-05-06 20:41:54
4inch 6inch 8inch 12inch sapphire Wafers epi-ready Prime grade DSP SSP sapphire substrates 8inch 200mm Ultra Thin sapphire wafers 0.1mm-50mm Thickness ... 2025-05-06 20:39:16
... Substrate Indium Arsenide InAs wafer Application Indium Arsenide (InAs) single crystal semiconductor substrates are materials with unique ... 2025-07-22 00:12:04
...Semiconductor Substrate For Epitaxial Growth VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth Gallium arsenide can be made ... 2025-05-06 20:45:00
... GaAs Wafer Product Description (GaAs) Gallium Arsenide Wafers PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide ... 2025-05-06 20:44:31
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single ... 2025-05-06 20:44:36
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single ... 2025-05-06 20:44:37
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