China Sapphire Substrate manufacturer
SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

Contact Person:
Mr.Wang
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2 Inch Sapphire Substrate AlN Template Layer Wafer For 5G BAW Devices

Brand Name ZMKJ
Model Number 2inch AlN-sapphire
Place of Origin China
Minimum Order Quantity 5pcs
Price by case
Payment Terms T/T, Western Union, paypal
Supply Ability 50pcs/month
Delivery Time in 30days
Packaging Details single wafer container in cleaning room
substrate sapphire wafer
layer AlN template
layer thickness 1-5um
conductivity type N/P
Orientation 0001
application high power/high frequency electronic devices
application 2 5G saw/BAW Devices
silicon thickness 525um/625um/725um
Detailed Product Description

2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate

2inch on sapphire substrate AlN Template layer Wafer For 5G BAW Devices

 

Applications of   AlN template
 
  Our OEM has developed a serials of proprietary technologies and the-state-of-the  art PVT growth reactors and facilities to
fabricate different sizes of high-quality single crystalline AlN wafers, AlN temlpates. We are one of the few world-leading
high-tech companies who own full AlN fabrication capabilities to produce high-quality AlN boules and wafers, and provide
professional services and turn-key solutions to our customers,arranged from the growth reactor and hotzone design,
modeling and simulation, process design and optimization, crystal growth,
wafering and material characterization. Up to April 2019, they have applied more than 27 patents  (including PCT).
 
                             Specification 
Characteristic Specification

 

Other relaterd  4INCH  GaN Template Specification 

 

 GaN/ Al₂O₃ Substrates (4") 4inch 
Item Un-dopedN-type

High-doped

N-type

Size  (mm)Φ100.0±0.5 (4")
Substrate StructureGaN on Sapphire(0001)
SurfaceFinished (Standard: SSP Option: DSP)
Thickness (μm)4.5±0.5; 20±2;Customized
Conduction Type Un-dopedN-typeHigh-doped N-type
Resistivity  (Ω·cm)(300K)≤0.5≤0.05≤0.01
GaN Thickness Uniformity
 
≤±10% (4")
Dislocation Density (cm-2)
 
≤5×108
Useable Surface Area>90%
Package Packaged in a class 100 clean room environment.
 

 

Crystal structure

Wurtzite

Lattice constant (Å)a=3.112, c=4.982
Conduction band typeDirect bandgap
Density (g/cm3)3.23
Surface microhardness (Knoop test)800
Melting point (℃)2750 (10-100 bar in N2)
Thermal conductivity (W/m·K)320
Band gap energy (eV)6.28
Electron mobility (V·s/cm2)1100
Electric breakdown field (MV/cm)11.7

 

Product Tags: 2 inch AlN Template   5G BAW Devices AlN Template   2 inch sapphire substrate  
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