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2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

Contact Person:
Mr.Wang View Contact Details

2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface

Brand Name	zmkj
Model Number	2inch
Place of Origin	china
Minimum Order Quantity	5PCS
Price	BY CASE
Payment Terms	T/T, Western Union, MoneyGram
Supply Ability	100pcs
Delivery Time	2-4weeks
Packaging Details	single wafer box
material	99.99％ purity single crystal
orientation	111
size	2inch
surface	lapped
thickness	300um
application	electronic and optoelectronic industry
growth method	LEC

Detailed Product Description

2-6 inch Gallium phosphide (GaP) crystals crystal substrate,GaP wafer

ZMKJ can provides 2inch GaP wafer – gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26eV(300K). The polycrystalline material has the appearance of pale orange pieces. Undoped single crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.Sulfur or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor.Gallium phosphide has applications in optical systems. Its refractive index is between 4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm (IR).

high quality single crystal GaP wafer ( Gallium phosphide ) to electronic and optoelectronic industry in diameter up to 2 inch . Gallium phosphide ( GaP ) crystal is an orange-yellow semi-translucent material formed by two elements , GaP wafer is an important semiconductor material which have unique electrical properties as other III-V compound materials and is widely used as red , yellow , and green LED ( light-emitting diodes ) . We have as-cut single crystal GaP wafer for your LPE application , and also provide epi ready grade GaP wafer for your MOCVD & MBE epitaxial application . Please contact us for more product information .

Electrical and Doping Specification

Product Name:

Gallium phosphide (GaP) crystal substrate

Technical parameters:

Crystal structure	Cubic a = 5.4505 Å
Growth method	Czochralski method
Density	4.13 g / cm ³
Mp	1480 ^o C 1
Thermal expansion coefficient	5.3 x10 ^-6 / ^O C
Dopant	S-doped undoped
Direction	<111> or <100> <100> or <111>
Type	N N
Thermal Conductivity	2 ~ 8 x10 ¹⁷ / cm ³ 4 ~ 6 x10 ¹⁶ / cm ³
Resistivity W.cm	0.03 to 0.3
EPD (cm ^-2)	<3x10 ⁵ <3x10 ⁵

Specifications:

Crystallographic directions: <111>, <100> ± 0.5 ^o

Standard polished Size: Ø2 "* 0.35mm; Ø2" * 0.43mm. Ø3"x0.3mm

Note: according to customer requirements with special dimensions and orientation substrates

StandardPacking

1000 clean room, 100 clean bag or single box packaging

Dopant available	S / Zn / Cr / Undoped
Type of conductivity	N / P ,Semi-conducting / Semi-insulating
Concentration	1E17 - 2E18 cm-3
Mobility	> 100 cm2 / v.s.

Product Specification

Growth	LEC
Diameter	Ø 2"
Thickness	300um
Orientation	<100> / <111> / <110> or others
Off orientation	Off 2° to 10°
Surface	One side polished or two sides polished or lapped
Flat options	EJ or SEMI. Std .
TTV	<= 10 um
EPD	<= 2E5 cm-2
Grade	Epi polished grade / mechanical grade
Package	Single wafer container

Sample pictures

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FAQ:

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 or 3 weeks after you place the order.

(2) For the special-shaped products, the delivery is 4 workweeks after you place the order.

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 3pcs.

(2) For customized products, the MOQ is 10-20pcs up.

Product Tags: wafer substrate semiconductor wafer

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2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface

2 Inch Gallium Phosphide Crystal Substrate GaP Wafer 0.3 Thickness Lapped Surface

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