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igbt devices gate driver
Selling leads
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JY13M N And P Channel 40V MOSFET With Low Input Capacitance For H-Bridge And Inverters General Description The JY13M is the N and P Channel logic ...
2025-03-18 00:00:02
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...driver GENERAL DESCRIPTION The JY14M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on...
2025-03-18 00:00:02
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...driver GENERAL DESCRIPTION The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density ...
2025-03-18 00:00:02
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...on‐resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use ...
2025-07-30 00:11:24
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JY16M N Channel Enhancement Mode Power MOSFET 600V/4A For Fast Switchong And Body Recovery General Description The JY16M utilizes the latest trench ...
2025-03-18 00:00:02
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... device. It achieves a high cell density and effectively minimizes on‐resistance through the utilization of cutting-edge trench processing ...
2025-03-18 00:00:02
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... gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a ...
2025-03-18 00:00:02
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... a low gate charge. These characteristics synergistically result in an exceptionally efficient and dependable device suitable for power switching ...
2025-03-18 00:00:02
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...density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...
2025-03-18 00:00:02
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JY11M N Channel Enhancement Mode Power MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell ...
2025-03-18 00:00:02
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