JY16M N Channel 600V TO220F-3 Package
Enhancement Mode Power MOSFET for BLDC motor driver
GENERAL DESCRIPTION
The JY16M utilizes the latest trench processing techniques to
achieve the high cell
density and reduces the on-resistance with high repetitive
avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for
use in power switching application and a wide variety of other
applications.
FEATURES
● 600V/4A, RDS(ON) =2.6Ω@VGS=10V
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation
APPLICATIONS
● Lighting
● High efficiency switch mode power supplies
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Rating | Unit |
| VDS | Drain-Source Voltage | 600 | V |
| VGS | Gate-Source Voltage | ± 30 | V |
| ID | Continuous Drain
Current | Tc=25ºC | 4 | A |
| Tc=100ºC | 2.9 |
| IDM | Pulsed Drain Current | 16 | A |
| PD | Maximum Power Dissipation | 33 | W |
| TJ TSTG | Operating Junction and Storage Temperature
Range | -55 to +150 | ºC |
| RθJC | Thermal Resistance-Junction to Case | 1.5 | ºC/W |
| RθJA | Thermal Resistance-Junction to Ambient | 62 |
Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Static Characteristics |
| BVDSS | Drain-Source
Breakdown Voltage | VGS=0V,IDS=250uA | 600 | V |
| IDSS | Zero Gate Voltage
Drain Current | VDS=600V,VGS=0V | 1 | uA |
| IGSS | Gate-Body Leakage
Current | VGS=± 30V,VDS=0V | ± 100 | nA |
| VGS(th) | Gate Threshold
Voltage | VDS= VGS, IDS=250uA | 2.0 | 3.0 | 4.0 | V |
| RDS(ON) | Drain-Source
On-state Resistance | VGS=10V,IDS=4A | 2.6 | 2.8 | Ω |
Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Drain-Source Diode Characteristics |
| VSD | Diode Forward
Voltage | VGS=0V,ISD=2A | 1.5 | V |
| Trr | Reverse Recovery Time | ISD=4A
di/dt=100A/us | 260 | ns |
| Qrr | Reverse Recovery Charge | 1.5 | nC |
| Dynamic Characteristics |
| RG | Gate Resistance | VGS=0V,VDS=0V,
f=1MHZ | 5 | Ω |
| Td(on) | Turn-on Delay Time | VDS=300V,
RG=25Ω,
IDS =4A, VGS=10V, | 15 | ns |
| Tr | Turn-on Rise Time | 48 |
| Td(off) | Turn-off Delay Time | 28 |
| Tf | Turn-off Fall Time | 35 |
| CISS | Input Capacitance | VGS=0V,
VDS=25V,
f=1.0MHz | 528 | pF |
| COSS | Output Capacitance | 72 |
| CRSS | Reverse Transfer
Capacitance | 9 |
| Qg | Total Gate Charge | VDS=480V,ID=4A,
VGS=10V | 16 | nC |
| Qgs | Gate-Source Charge | 3.5 |
| Qgd | Gate-Drain Charge | 7.1 |
DOWNLOAD JY16M USER MANUAL
JY16M.pdf
