3 Phase 30A H Bridge Circuit Bldc Mosfet Driver

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Changzhou Bextreme Shell Motor Technology Co.,Ltd

City: changzhou

Province/State:jiangsu

Country/Region:china

Tel:86-189-94777701

Contact Person:
Mr.Amigo Deng View Contact Details

3 Phase 30A H Bridge Circuit Bldc Mosfet Driver

Brand Name	JUYI
Model Number	JY12M
Minimum Order Quantity	1 set
Packaging Details	PE bag+ carton
Place of Origin	China
Price	Negotiable
Delivery Time	5-10 days
Payment Terms	T/T,L/C,Paypal
Supply Ability	1000sets/day
Drain-Source Voltage	30 V
Gate-Source Voltage	±20V
Maximum Power Dissipation	1.5W
Pulsed Drain Current	30A
Application	DC/DC Converter
Color	Black

Detailed Product Description

JY12M N and P Channel 30V MOSFET for BLDC motor driver

GENERAL DESCRIPTION

The JY12M is the N and P Channel logic enhancement mode power field transistors
are produced using high cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits where high-side
switching, and low in-line power loss are needed in a very small outline surface
mount package.

FEATURES

Device	RDS(ON) MAX	IDMAX(25ºC)
N-Channel	20mΩ@VGS=10V	8.5A
32mΩ@VGS=4.5V	7.0A
P-Channel	45mΩ@VGS=-10V	-5.5A
85mΩ@VGS=-4.5V	-4.1A

● Low Input Capacitance
● Fast Switching Speed

APPLICATIONS
● Power Management
● DC/DC Converter
● DC Motor Control
● LCD TV & Monitor Display Inverter
● CCFL inverter

Absolute Maximum Ratings(Ta=25ºC Unless Otherwise Noted)

Parameter	Symbol	N Channel	P Channel	Unit
10 sec	Steady	10 sec	Steady
Drain Source Voltage	VDSS	30	-30	V
Gate Source Voltage	VDSS	±20	±20
Continuous Drain Current	Ta=25 ºC	ID	8.5	6.5	-7.0	-5.3	A
Ta=70 ºC	6.8	5.1	-5.5	-4.1
Pulsed Drain Current	IDM	30	-30
Maximum Power Dissipation	Ta=25 ºC	PD	1.5	W
Ta=70 ºC	0.95
Operating Junction Temperature	TJ	-55 to 150	ºC
Thermal Resistance Junction to Ambient	RθJA	61	100	62	103	ºC/W
Thermal Resistance Junction to Case	RθJC	15	15	ºC/W

Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Static
VGS(th)	Gate Threshold Voltage	VDS=VGS,ID=250uA	N-Ch	1.0	1.5	3.0	V
VDS=VGS,ID=-250uA	P-Ch	-1.0	-1.5	-3.0
IGSS	Gate Leakage Current	VDS=0V, VGS=±20V	N-Ch	±100	nA
P-Ch	±100
IDSS	Zero Gate Voltage Drain Current	VDS=30V, VGS=0V	N-Ch	1	uA
VDS=-30V, VGS=0V	P-Ch	-1
ID(ON)	On-State Drain Current	VDS≥5V, VGS=10V	N-Ch	20	A
VDS≤-5V, VGS=-10V	P-Ch	-20
RDS(ON)	Drain-Source On-State Resistance	VGS=10V,ID=7.4A	N-Ch	15	20	mΩ
VGS=-10V,ID=-5.2A	P-Ch	38	45
VGS=4.5V,ID=6.0A	N-Ch	23	32
VGS=-4.5V,ID=-4.0A	P-Ch	65	85
VSD	Diode Forward Voltage	IS=1.7A,VGS=0V	N-Ch	0.8	1.2	V
IS=-1.7A,VGS=0V	P-Ch	-0.8	-1.2

DOWNLOAD JY12M USER MANUAL

JY12M.pdf

Product Tags: bldc motor mosfet driver 3 phase bldc motor driver mosfet mosfet driver circuit for bldc motor

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