China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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silicon carbide power modules 1200v

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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silicon carbide power modules 1200v

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Automotive IGBT Modules NXH010P120M3F1PTG 1200V Half Bridge Silicon Carbide MOSFET Module [MJD Advantage] + 15 years experience for electronic ... 2025-04-29 03:33:47
NXH040F120MNF1PG Automotive IGBT Modules 1200V 40mΩ Silicon Carbide MOSFET Module [MJD Advantage] + 15 years experience for electronic components + ... 2024-12-10 00:40:35
1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide ... 2025-07-14 00:20:06
...manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V ... 2025-07-14 00:19:34
N-Channel NTH4L040N120SC1 Silicon Carbide Power MOSFET Transistors TO-247-4L​ Product Description Of NTH4L040N120SC1 NTH4L040N120SC1 is 1200V 58A(Tc) ... 2025-07-14 00:19:33
... level inverter stage. Specification Of NXH80T120L2Q0S2TG Part Number: NXH80T120L2Q0S2TG Collector−Emitter Voltage: 1200V Gate−Emitter Voltage: ... 2024-12-09 22:21:11
... combined with low capacitances and very high switching operations. Specification Of SCT070H120G3AG Part Number: SCT070H120G3AG Drain-Source ... 2025-07-14 00:19:44
Automotive IGBT Modules MSCSM70VR1M10CT3AG 700V Silicon Carbide Power MOSFET Modules [MJD Advantage] + 15 years experience for electronic components + ... 2024-12-09 23:45:30
ECB2R8M12YM3 Automotive IGBT Modules SiC Power Module 1200V YM3 Six-Pack Power Module [MJD Advantage] + 15 years experience for electronic components ... 2025-06-28 07:30:25
Automotive IGBT Modules NXH80T120L3Q0P3G Power Module 1200V High Speed IGBT Module [MJD Advantage] + 15 years experience for electronic components + ... 2024-12-09 23:42:12
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