China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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mosfet silicon carbide modules

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

Contact Person:
Mr.Sales Manager
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701 - 710 of 753

mosfet silicon carbide modules

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...Emitter Controlled 4 diode. Specification Of FZ900R12KE4 Part Number: FZ900R12KE4 Product: IGBT Silicon Modules Configuration: Single Collector- ... 2025-07-04 07:30:28
... with TRENCHSTOP™ IGBT3 and Emitter Controlled HE diode. Specification Of FS450R12KE3 Part Number: FS450R12KE3 Product: IGBT Silicon Modules ... 2025-07-05 00:22:05
... 650V Automotive IGBT Modules NXH50M65L4C2SG Three Phase Inverter NXH50M65L4C2SG IGBT Silicon Modules 650V Automotive IGBT Modules​ Product ... 2024-12-09 22:21:23
Silicon Driver LMG3425R050RQZR Gate Drivers GaN FET With Integrated Driver​ Description LMG3425R050RQZR integrates a silicon driver that enables ... 2025-06-22 00:16:27
... and EC7 diode technology based on the latest micro-pattern trenches technology. Specification Of FP100R12N2T7B11BPSA1 Part Number FP100R12N2T7B11B... 2025-07-22 00:26:11
...Automotive IGBT Modules 3 Phase Inverter NXH350N100H4Q2F2P1G 3-Phase Inverter NXH350N100H4Q2F2P1G 1kV High Denity IGBT Silicon Modules​ Product ... 2024-12-09 22:24:04
Through Hole IDWD15G120C5XKSA1 Silicion Carbide Schottky Single Diodes Rectifiers Product Description Of IDWD15G120C5XKSA1 IDWD15G120C5XKSA1 combined ... 2025-07-21 00:24:58
.... The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. Specification Of FS820R08A6P2 Part Number ... 2025-07-22 00:26:11
...Module Three Phase Inverter 1200 V Chassis Mount Product Description Of FP75R12N3T7BPSA1 FP75R12N3T7BPSA1 offers low switching losses and a low VCE... 2025-07-22 00:26:11
... LMZ31710RVQR Power Module 10A BQFN42 Non Isolated PoL Module​ Product Description Of LMZ31710RVQR LMZ31710RVQR power module is an easy-to-use ... 2025-07-14 00:20:04
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