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mosfet silicon carbide modules
Selling leads
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... reliability than Silicon. Specification Of NVHL060N090SC1 Part Number NVHL060N090SC1 Vgs(th) (Max) @ Id 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs .....
2025-07-14 00:20:05
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... Power MOSFET, High speed switching performances, package is H2PAK-7. Specification Of SCT040H120G3AG Part Number: SCT040H120G3AG Gate Threshold ...
2025-07-19 00:24:40
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... TO-247-3 SiCFET Product Description Of IMW120R220M1H IMW120R220M1H is a 1200 V CoolSiC™ trench-type silicon carbide MOSFET monotube in a TO247-3 ...
2025-07-19 00:24:43
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NTHL020N090SC1 Single FETs Transistors 900V TO-247-3 Integrated Circuit Chip Product Description Of NTHL020N090SC1 NTHL020N090SC1 is 20mohm, 900V, M2 ...
2025-07-14 00:20:03
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...SCTW35N65G2VAG N-Channel Transistors Through Hole Product Description Of SCTW35N65G2VAG SCTW35N65G2VAG is Automotive-grade silicon carbide Power ...
2025-07-14 00:20:06
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Surface Mount SCTH35N65G2V-7 Single N-Channel 650V 45A 208W Transistors Product Description Of SCTH35N65G2V-7 SCTH35N65G2V-7 is Automotive-grade ...
2025-07-14 00:20:06
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...Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared ...
2025-07-19 00:24:39
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... - Average Rectified (Io) 27A Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A Avalanche Rated 49 mJ Technology SiC (Silicon Carbide)
2025-07-22 00:27:05
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... Carbide (SiC) Schottky Barrier Diodes (SBDs). Specification Of MSC030SDA170B Part Number MSC030SDA170B Technology SiC (Silicon Carbide) Schottky ...
2025-07-21 00:24:58
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... including Silicon Carbide, voltage and current ratings, and packages. Unique requirements can be met with application-specific power modules (ASPM...
2025-07-14 00:20:07
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