LMG3425R050RQZR Gan Mosfet Driver Silicon Driver Gan Fet Drivers Integrated
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Silicon Driver LMG3425R050RQZR Gate Drivers GaN FET With Integrated Driver
Description LMG3425R050RQZR integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R050 includes ideal diode mode, which reduces third-quadrant losses by enabling adaptive dead-time control.
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Product Tags: LMG3425R050RQZR Gan Mosfet Driver Gan Mosfet Driver Silicon Gan Fet Drivers Integrated |
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