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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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silicon power transistors

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...Transistors 3904 TRANSISTOR NPN Complementary to MMBT3906 MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM ... 2024-12-09 22:37:32
...Transistors NPN 40V 200mA 1AM 100-300 SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING... 2024-12-09 22:37:32
... Requirements • Lead (Pb)-free Available Discriptions Third generation Power MOSFETs from Vishay provide the designer with the best combination of ... 2024-12-09 22:38:38
NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and ... 2024-12-09 22:38:51
MPSA42; MPSA43 NPN high-voltage transistors FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Video • Telephony • ... 2024-12-09 22:38:51
PMBT3906 PNP switching transistor General description PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic ... 2024-12-09 22:41:27
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ... 2024-12-09 22:41:27
PNP switching transistor 2N3906 FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial ... 2024-12-09 22:41:27
...DarliCM GROUPon Transistor hFE > 20k @ 100mA for High Gain  High Gain Hold-Up to 5A  625mW Power Dissipation  Complementary DarliCM GROUPon NPN ... 2024-12-09 22:48:58
BZV85C7V5 DO-41 SILICON PLANAR POWER ZENER Diode Features Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high ... 2024-12-09 22:41:27
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