China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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multi emitter transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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multi emitter transistor

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BFG135 NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier ... 2026-01-05 15:51:23
...Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS General purpose ... 2026-01-05 15:51:23
...Transistors 3904 TRANSISTOR NPN Complementary to MMBT3906 MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM ... 2026-01-05 15:51:23
...Transistors NPN 40V 200mA 1AM 100-300 SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES z Complementary to MMBT3906 MARKING... 2026-01-05 15:51:23
... Lead (I-PAK, “- I” Suffix) NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units ... 2026-01-05 15:51:23
... Emitter-Base Voltage VEBO 6 6 6 Vdc Collector Current Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Max ... 2026-01-05 15:51:23
... NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893 Maximum Ratings RATING SYMBOL MAX. UNIT Collector-Emitter Voltage VCEO 80 Vdc ... 2026-01-05 15:51:23
...Transistors BD439 BD441 DESCRIPTION • With TO-126 package • Complement to type BD440,BD442 APPLICATIONS ·For medium power linear and switching ... 2026-01-05 15:51:23
...Transistor KSP2907A Equivalent PNP Amplifier ​ Features • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • ... 2026-01-05 15:51:23
...Transistor (−100V , −2A) 2SB1580 / 2SB1316 Features 1) DarliCM GROUPon connection for high DC current gain. 2) Built-in resistor between base and ... 2026-01-05 15:51:23
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