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low voltage power mosfet
Selling leads
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BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ...
2024-12-09 22:41:27
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. . . designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an ...
2024-12-09 22:41:27
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High Current Lead Mounted Rectifiers Features • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case ...
2024-12-09 22:41:27
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STA434A PNP + NPN DarliCM GROUPon H-bridge Absolute maximum ratings Symbol Specification Unit NPN PNP VCBO 80 -60 V VCEO 60 -60 V VEBO 6 -6 V IC 4 -4 ...
2024-12-09 22:41:27
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Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 ...
2024-12-09 22:41:27
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SCRs (1 A to 70 A) General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers ...
2024-12-09 22:41:39
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...Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg , Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω ...
2024-12-09 22:43:31
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...Low-Side MOSFET Driver Features • Reliable, low-power bipolar/CMOS/DMOS construction • Latch-up protected to >500mA reverse current • Logic input ...
2024-12-09 22:41:39
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... high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The ...
2024-12-09 22:37:47
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... Voltage uppressors - 6.8V-440V high voltage power mosfet Features Axial lead type devices for through hole design .1500W peak pulse power ...
2024-12-09 22:38:51
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