CSD13381F4 Low Resistance Mosfet Power Transistor N-CH Pwr Single Configuration

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

12

V

Qg

Gate Charge Total (4.5 V)

1060

pC

Qgd

Gate Charge Gate-to-Drain

140

pC

RDS(on)

Drain-to-Source On-Resistance

VGS = 1.8 V

310

mΩ

VGS = 2.5 V

170

mΩ

VGS = 4.5 V

140

mΩ

VGS(th)

Threshold Voltage

0.85

V

Device

Qty

Media

Package

Ship

CSD13381F4

3000

7-Inch Reel

Femto (0402) 1.0 mm x 0.6 mm SMD Lead Less

Tape and Reel

CSD13381F4T

250

TA = 25°C unless otherwise stated

VALUE

UNIT

VDS

Drain-to-Source Voltage

12

V

VGS

Gate-to-Source Voltage

8

V

ID

Continuous Drain Current, TA = 25°C(1)

2.1

A

IDM

Pulsed Drain Current, TA = 25°C(2)

7

A

IG

Continuous Gate Clamp Current

35

mA

Pulsed Gate Clamp Current(2)

350

PD

Power Dissipation(1)

500

mW

ESD Rating

Human Body Model (HBM)

4

kV

Charged Device Model (CDM)

2

kV

TJ, Tstg

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, single pulse ID = 7.4 A, L=0.1mH,RG =25Ω

2.7

mJ