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CSD13381F4 Low Resistance Mosfet Power Transistor N-CH Pwr Single Configuration

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CSD13381F4 Low Resistance Mosfet Power Transistor N-CH Pwr Single Configuration

Brand Name Ti
Model Number CSD13381F4
Minimum Order Quantity Contact us
Price Contact us
Payment Terms Paypal, Western Union, TT
Supply Ability 50000 Pieces per Day
Delivery Time The goods will be shipped within 3 days once received fund
Packaging Details SMD
Description MOSFET N-CH 12V 2.1A 3PICOSTAR
Channel Mode Enhancement
Configuration Single
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Product Category MOSFET
Manufacturer Texas Instruments
Detailed Product Description

CSD13381F4 Mosfet Power Transistor MOSFET 12V N-CH Pwr MOSFET

 

1 Features

  • Low On-Resistance
  • Low Qg and Qgd

  • Low Threshold Voltage

  • Ultra-Small Footprint (0402 Case Size)

    – 1.0mm×0.6mm

  • Ultra-Low Profile

– 0.35 mm Height

  • Integrated ESD Protection Diode

    • – Rated >4 kV HBM

    • – Rated >2 kV CDM

  • Lead and Halogen Free

  • RoHS Compliant

     

2 Applications

  • Optimized for Load Switch Applications

  • Optimized for General Purpose Switching Applications

  • Single-Cell Battery Applications

  • Handheld and Mobile Applications

     

3 Description

This 140 mΩ, 12 V N-channel FemtoFETTM MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

 

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

12

V

Qg

Gate Charge Total (4.5 V)

1060

pC

Qgd

Gate Charge Gate-to-Drain

140

pC

RDS(on)

Drain-to-Source On-Resistance

VGS = 1.8 V

310

VGS = 2.5 V

170

VGS = 4.5 V

140

VGS(th)

Threshold Voltage

0.85

V

 

Ordering Information

Device

Qty

Media

Package

Ship

CSD13381F4

3000

7-Inch Reel

Femto (0402) 1.0 mm x 0.6 mm SMD Lead Less

Tape and Reel

CSD13381F4T

250

 

Absolute Maximum Ratings

TA = 25°C unless otherwise stated

VALUE

UNIT

VDS

Drain-to-Source Voltage

12

V

VGS

Gate-to-Source Voltage

8

V

ID

Continuous Drain Current, TA = 25°C(1)

2.1

A

IDM

Pulsed Drain Current, TA = 25°C(2)

7

A

IG

Continuous Gate Clamp Current

35

mA

Pulsed Gate Clamp Current(2)

350

PD

Power Dissipation(1)

500

mW

ESD Rating

Human Body Model (HBM)

4

kV

Charged Device Model (CDM)

2

kV

TJ, Tstg

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, single pulse ID = 7.4 A, L=0.1mH,RG =25Ω

2.7

mJ

Product Tags: p channel mosfet driver circuit   n channel mos field effect transistor  
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