181 - 190 of 2381
low voltage power mosfet
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...Power MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single FEATURES • ...
2026-01-05 15:51:23
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KBP210 Linear Power Mosfet Trench Power Mosfet Single Phase 2.0 Amps Glass Passivated Bridge Rectifiers FEATURES ‧Ideal for printed circuit board ...
2026-01-05 15:51:23
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... 2050 is a monolithic integrated circuit in Pentawatt package, intended for use as an audio class AB audio amplifier. Thanks to its high power ...
2026-01-05 15:51:23
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... TESTED ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED DESCRIPTION The PowerMESHTM ΙΙ is the evolution of the first generation of MESH ...
2026-01-05 15:51:23
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...MOSFET General Description These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has ...
2026-01-05 15:51:23
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...IPAK/D2PAK Zener-Protected SuperMESHTMPower MOSFET ■ TYPICAL RDS(on) = 1.76 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ GATE ...
2026-01-05 15:51:23
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...Low current (max. 100 mA). Low voltage (max. 65 V). Collector-base voltage VCBO 80 V Features Low current (max. 100 mA). Low voltage (max. 65 V). ...
2026-01-05 15:51:23
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...low-voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Features ■ SPI bus compatible serial ...
2026-01-05 15:51:23
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2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor FEATURES * 1W output applications * Complementary to 2SC2120 CLASSIFICATION OF hFE (1) Product...
2026-01-05 15:51:23
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P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4...
2026-01-05 15:51:23
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