FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

FDS6975 Dual P-Channel, Logic Level, PowerTrench^TM MOSFET

General Description

These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Features

• -6 A, -30 V. R_DS(ON) = 0.032 W @ V_GS = -10 V,

                     R_DS(ON) = 0.045 W @ V_GS = -4.5 V.

• Low gate charge (14.5nC typical).

• High performance trench technology for extremely low R_DS(ON).

• High power and current handling capability.

Absolute Maximum Ratings T_A = 25℃ unless otherwise noted

THERMAL CHARACTERISTICS

Notes:

1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.

2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.

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