331 - 340 of 2446
low power zener diode
Selling leads
|
...Diode Electrnocs Component Transistor Chip IC Electronics MOSFET Metal Oxide Semiconductor Field Effect Transistor FEATURES • Extremely low losses ...
2024-12-09 22:41:27
|
|
...) ■ Axial & SMD package ■ Unidirectional and low VF (VF = 1.2 V at IF = 3 A) ■ Low clamping factor ■ Fast response time Description The LNBTVSx...
2024-12-09 22:41:27
|
|
...Power Amplifier IC Precision Amplifiers 36V Prec 2.8nV/Hz RRO FEATURES Very low voltage noise: 2.8 nV/√Hz Rail-to-rail output swing Low input bias ...
2024-12-09 22:37:47
|
|
...Diode with soft recovery Features • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching ...
2024-12-09 22:41:27
|
|
PESD3V3L5UF Low capacitance unidirectional fivefold ESD protection diode arrays 1. Product profile 1.1 General description Low capacitance unidirectio...
2024-12-09 22:41:27
|
|
...Diode, RoHS Compliant, 940 nm, GaAlAs, DDH FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak waveleCM ...
2024-12-09 22:38:38
|
|
...Diode Transient Voltage Suppressors Features ■ Peak pulse power: 1500 W (10/1000 µs) ■ Breakdown voltage range: From 6.8 V to 440 V ■ Uni and ...
2024-12-09 22:41:27
|
|
...Power 400W Stand Off Voltage 5.0 to 440V Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Optimized for ...
2024-12-09 22:41:27
|
|
LM338T/NOPB LM138/LM338 5-Amp Adjustable Regulators Signal Schottky diode double diode model FEATURES • Specified 7A Peak Output Current • Specified ...
2024-12-09 22:42:04
|
|
...power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast ...
2024-12-09 22:38:51
|