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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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high speed mosfet transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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high speed mosfet transistor

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... : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • ... 2024-12-09 22:38:38
IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET TYPE VDSS RDS(on) ID IRFBC30 600 V < 2.2 Ω 3.6 A TO-220 ■ TYPICAL RDS(on) = 1.8 ... 2024-12-09 22:38:38
HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS = 800 V ID25 = 27 A RDS(on) = 300 m trr ≤ 250 ns N-Channel ... 2024-12-09 22:38:51
SUM110P06-07L P-Channel 60-V (D-S) 175℃ MOSFET FEATURES • TrenchFET Power MOSFET • New Package with Low Thermal Resistance APPLICATIONS • Automotive − ... 2024-12-09 22:38:51
...Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP STW10NK80Z 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω 9 A ... 2024-12-09 22:41:27
... Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With ... 2024-12-09 22:41:27
... 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier ... 2024-12-09 22:41:27
...High Speed Optocouplers 1 Mb/s 3750Vrms Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated ... 2024-12-09 22:37:47
2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor FEATURES * 1W output applications * Complementary to 2SC2120 CLASSIFICATION OF hFE (1) Product... 2024-12-09 22:41:27
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ... 2024-12-09 22:41:27
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