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high speed mosfet transistor
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... : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • ...
2024-12-09 22:38:38
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IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET TYPE VDSS RDS(on) ID IRFBC30 600 V < 2.2 Ω 3.6 A TO-220 ■ TYPICAL RDS(on) = 1.8 ...
2024-12-09 22:38:38
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HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS = 800 V ID25 = 27 A RDS(on) = 300 m trr ≤ 250 ns N-Channel ...
2024-12-09 22:38:51
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SUM110P06-07L P-Channel 60-V (D-S) 175℃ MOSFET FEATURES • TrenchFET Power MOSFET • New Package with Low Thermal Resistance APPLICATIONS • Automotive − ...
2024-12-09 22:38:51
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P10NK80ZFP smd power mosfet Power Mosfet Transistor N-CHANNEL Zener-Protected SuperMESH⑩Power MOSFET
...Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP STW10NK80Z 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω 9 A ...
2024-12-09 22:41:27
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... Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With ...
2024-12-09 22:41:27
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... 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier ...
2024-12-09 22:41:27
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...High Speed Optocouplers 1 Mb/s 3750Vrms Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated ...
2024-12-09 22:37:47
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2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor FEATURES * 1W output applications * Complementary to 2SC2120 CLASSIFICATION OF hFE (1) Product...
2024-12-09 22:41:27
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BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ...
2024-12-09 22:41:27
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