China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
3
Home > Products > Electronic IC Chips >

NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

Browse Categories

ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
View Contact Details

NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

Model Number 2SC5200
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-264
Collector-Base Voltage 230 V
Collector-Emitter Voltage 230 V
Emitter-Base Voltage 5 V
Collector Current(DC) 15 A
Base Current 1.5 A
Junction and Storage Temperature - 50 ~ +150 °C
Detailed Product Description

 

2SC5200/FJL4315

NPN Epitaxial Silicon Transistor

 

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

 

Features

• High Current Capability: IC = 15A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1943/FJL4215.

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

  -- TO3P package, 2SC5242/FJA4313 : 130 watts

  -- TO220 package, FJP5200 : 80 watts

  -- TO220F package, FJPF5200 : 50 watts

 

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

  Symbol            Parameter     Ratings      Units
  BVCBO  Collector-Base Voltage    230        V
  BVCEO  Collector-Emitter Voltage    230        V
  BVEBO  Emitter-Base Voltage      5        V
   IC  Collector Current(DC)     15        A
   IB  Base Current     1.5        A
   PD

  Total Device Dissipation(TC=25°C)

  Derate above 25°C

     150

     1.04

        W

      W/°C

  TJ, TSTG  Junction and Storage Temperature    - 50 ~ +150        °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

 

Thermal Characteristics* Ta=25°C unless otherwise noted   

  Symbol            Parameter     Max     Units
   RθJC  Thermal Resistance, Junction to Case     0.83     °C/W

* Device mounted on minimum pad size

 

hFE Classification

   Classification           R            O
      hFE1      55 ~ 110       80 ~ 160

 

 

Typical Characteristics

 

 

 

Package Dimensions

 

 

Product Tags: npn smd transistor   multi emitter transistor  
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: ChongMing Group (HK) Int'l Co., Ltd
Subject:
Message:
Characters Remaining: (80/3000)