1001 - 1010 of 1087
fast ethernet switch chip
Selling leads
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NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors ...
2024-12-09 22:38:51
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SUM110P06-07L P-Channel 60-V (D-S) 175℃ MOSFET FEATURES • TrenchFET Power MOSFET • New Package with Low Thermal Resistance APPLICATIONS • Automotive − ...
2024-12-09 22:38:51
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Silicon NPN Power Transistors BD439 BD441 DESCRIPTION • With TO-126 package • Complement to type BD440,BD442 APPLICATIONS ·For medium power linear and ...
2024-12-09 22:38:51
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TLP627-4 PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION Transistor Equivalent The TOSHIBA TLP627,-2 and -4 consists of a gallium ...
2024-12-09 22:38:51
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SUM110P06-07L P-Channel 60-V (D-S) 175℃ MOSFET FEATURES • TrenchFET Power MOSFET • New Package with Low Thermal Resistance APPLICATIONS • Automotive − ...
2024-12-09 22:38:51
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BYV26EGP-E3/73 Glass Passivated Ultrafast Rectifier FEATURES Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage ...
2024-12-09 22:38:51
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MAIN FEATURES: Symbol Value Unit IT(RMS) 6 A VDRM/VRRM 600 and 800 V IG (Q1) 5 to 50 mA DESCRIPTION Suitable for AC switching operations, the BTA/ ...
2024-12-09 22:38:51
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GENERAL DESCRIPTION Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high bidirectional blocking voltage ...
2024-12-09 22:38:51
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FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using ...
2024-12-09 22:38:51
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Thyristors BT151 series GENERAL DESCRIPTION Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high ...
2024-12-09 22:38:51
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