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dfn8 temperature sensor chip
Selling leads
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A1101, A1102, A1103, A1104, and A1106 Continuous-Time Switch Family Features and Benefits ▪ Continuous-time operation ▫ Fast power-on time ▫ Low noise ...
2024-12-09 22:38:38
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• Advanced Process • Technology Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated ...
2024-12-09 22:38:38
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Silicon NPN Power Transistors BD909 BD911 DESCRIPTION · ·With TO-220C package ·Complement to type BD910 BD912 APPLICATIONS · Intented for use in power ...
2024-12-09 22:38:38
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FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: ...
2024-12-09 22:38:38
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Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • 150o C Junction Temperature • Through ...
2024-12-09 22:38:38
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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V ...
2024-12-09 22:38:51
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HUF75645P3, HUF75645S3S 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Features • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • ...
2024-12-09 22:38:51
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IRF1010EPbF HEXFET® Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast ...
2024-12-09 22:38:51
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IRFZ34NPbF HEXFET® Power MOSFET • Advanced Process • Technology Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast ...
2024-12-09 22:38:51
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PDP SWITCH IRFB4229PbF Features • Advanced Process Technology • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications ...
2024-12-09 22:38:51
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