China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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500mw esd protection device

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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500mw esd protection device

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... to +85 °C and −40 to +125 °C. DESCRIPTION The 74HC00/74HCT00 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky ... 2024-12-09 22:38:25
...and −40 to +125 °C. DESCRIPTION The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They ... 2024-12-09 22:38:25
... 200 V ■ Specified from −40 °C to +85 °C and from −40 °C to +125 °C General description The 74HC240; 74HCT240 is a high-speed Si-gate CMOS device ... 2024-12-09 22:41:39
...ESD protection: ◆ HBM EIA/JESD22-A114-C exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ■ Multiple package options ■ Specified from −40 °C to ... 2024-12-09 22:41:39
... options  Specified from 40 C to +85 C and from 40 C to +125 C General description The 74HC14; 74HCT14 is a high-speed Si-gate CMOS device ... 2024-12-09 22:41:39
... Exceeds 250 mA Per JESD 17 ► ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model (A114-A) − 200-V Machine Model (A115-A) − 1000-V Charged... 2024-12-09 22:41:39
...Small Surface Mount Package • ESD Protected Gate, 1.2kV HBM • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4) • ... 2024-12-09 22:42:04
...ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V • Specified from −40 to +85 °C and −40 to +125 °C. ... 2024-12-09 22:42:04
... Operation Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model (A114-A) − 200-V Machine Model ... 2024-12-09 22:42:04
... Capacitors Operates up to 120 kbit/s Two Drivers and Two Receivers ±30-V Input Levels Low Supply Current: 8 mA Typical ESD Protection Exceeds JESD ... 2024-12-09 22:37:47
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