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Shenzhen Retechip Electronics Co., Ltd
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low loss igbt power transistor

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Shenzhen Retechip Electronics Co., Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:00-86-13922881519

Contact Person:
Mr.Allen Wang
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low loss igbt power transistor

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...IGBT Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology ... 2024-12-09 22:06:54
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar ... 2024-12-09 22:06:54
... for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential Features • High Current ... 2024-12-09 22:06:54
...Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field ... 2024-12-09 22:06:54
...15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic ... 2024-12-09 22:06:54
...Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of ... 2024-12-09 22:06:54
...Power Switching IGBT 1200V 40A 310W TO3P High Speed Switching Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low ... 2024-12-09 22:06:54
... module designed to meet the demanding requirements of modern electronic systems. With its advanced features and reliable performance, this module ... 2024-12-09 23:34:13
IKW30N60H3 IK30N60H3FKSA1 IKW75N65ES5 IKW75N65EH5 Insulated Gate Bipolar Transistor Applications •uninterruptiblepowersupplies •weldingconverters ... 2024-12-09 22:06:54
IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A ... 2024-12-09 22:06:54
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