IKW15N120T2 IGBT Power Transistor

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Shenzhen Retechip Electronics Co., Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:00-86-13922881519

Contact Person:
Mr.Allen Wang View Contact Details

IKW15N120T2 IGBT Power Transistor

Brand Name	Infineon
Model Number	IKW15N120T2
Place of Origin	Original Factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, MoneyGram
Supply Ability	10000pcs Per Month
Delivery Time	2-3work days
Packaging Details	240Pcs
Type	IGBT Transistor
Description	LOW LOSS DuoPack 1200V 15A
Shipping by	DHL\UPS\Fedex\EMS\HK Post\TNT
Lead time	2-3Working days
Power - Max	235 W
Mounting Style	Through Hole

Detailed Product Description

IKW15N120T2 IGBT Transistors LOW LOSS DuoPack 1200V 15A Hard Switching Anti Parallel Diode

Description

1200 V, 15 A IGBT discrete with anti-parallel diode in TO-247 package

Hard-switching 1200 V, 15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in a TO-247

package provides significant improvement of static as well as dynamic performance of the device, due

to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter

controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best

compromise between switching and conduction losses.

Highest efficiency – low conduction and switching losses
Comprehensive portfolio in 600 V and 1200 V for flexibility of design
High device reliability

Features

Lowest VCEsat drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery anti-parallel Emitter Controlled diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution

Applications

Motor control and drives
Solutions for photovoltaic energy systems
Uninterruptible Power Supplies (UPS)

Specifications

Product Attribute	Attribute Value

Product Category:	IGBT Transistors
Technology:	Si
Package / Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.7 V
Maximum Gate Emitter Voltage:	- 20 V, + 20 V
Continuous Collector Current at 25 C:	30 A
Pd - Power Dissipation:	235 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	Trenchstop IGBT3
Packaging:	Tube
Brand:	Infineon Technologies
Continuous Collector Current Ic Max:	30 A
Gate-Emitter Leakage Current:	600 nA
Height:	20.9 mm
Length:	15.9 mm
Product Type:	IGBT Transistors

Shopping Guide

Shipping	Delivery period	For in-stock parts, orders are estimated to ship out in 3 days. Once shipped, estimated delivery time depends on the below carriers you chose: DHL Express, 3-7 business days. DHL eCommerce,12-22 business days. FedEx International Priority, 3-7 business days EMS, 10-15 business days. Registered Air Mail, 15-30 business days.
	Shipping rates	After confirming the order, we will evaluate the shipping cost based on the weight of the goods
	Shipping option	We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
	Shipping tracking	We will notify you by email with tracking number once order is shipped.
Returning warranty	Returning	Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
Returning warranty	Warranty	All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
Ordering	Payment	T/T,PayPal, Credit Card includes Visa, Master, American Express.

Product Tags: IKW15N120T2 IGBT Power Transistor IKW15N120T2 insulated gate transistor

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