IKW30N60H3 Field Stop IGBT Power Transistor 600V 30A 187W Low EMI
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IKW30N60H3 IK30N60H3FKSA1 IKW75N65ES5 IKW75N65EH5 Insulated Gate Bipolar Transistor Applications •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency Specifications
Description HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW30N60H3 600Vhighspeedswitchingseriesthirdgeneration Features •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: Shopping Guide
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Product Tags: IKW30N60H3 Field Stop IGBT IKW30N60H3 IGBT Power Transistor Field Stop igbt 600v 30a |
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