Insulated Gate Bipolar Transistor FGH40N60SFD
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FGH40N60SFD FGH60N60SFDTU FGH40N120ANTU FGH40N65UFDTU Insulated Gate Bipolar Transistor Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS Specifications
Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • Qualified to Automotive Requirements of AEC−Q101 (FGH40N60SFDTU−F085) • These Devices are Pb−Free and are RoHS Compliant Shopping Guide
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Product Tags: Insulated Gate Bipolar Transistor FGH40N60SFD FGH40N60SFD IGBT Transistors |
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