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Shenzhen Retechip Electronics Co., Ltd
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high power transistor 35a

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Shenzhen Retechip Electronics Co., Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:00-86-13922881519

Contact Person:
Mr.Allen Wang
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high power transistor 35a

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...ª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the ... 2024-12-09 22:07:10
ONSEMI TIP31CG 3A 100V 40W NPN TRANSISTORS TIP31C NPN TYPE TRANSISTOR TIP31C TRANSISTORS TO-220-3​ 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40... 2024-12-09 23:34:13
...1 pole 35A, 1 form A (NO) contact • Contact gap >1.5/1.8/2.1 mm options available • 350mW hold power1) n Ambient temperature up to 85°C at 35A • ... 2024-12-09 22:07:10
...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product ... 2024-12-09 22:06:54
... resistor ▪ CMOS compatible input (3.3 V and 5 V) ▪ High-side gate driver using bootstrap circuit or floating power supply ▪ Built-in protection ... 2024-12-09 22:06:54
...Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc-Dc Converters Description Single MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg ... 2024-12-09 22:06:54
... Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247 Mounting Style: Through Hole Collector- ... 2024-12-09 22:06:54
...Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to ... 2024-12-09 22:07:10
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel ... 2024-12-09 22:06:54
... Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter ... 2024-12-09 22:06:54
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