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STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W

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Shenzhen Retechip Electronics Co., Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:00-86-13922881519

Contact Person:
Mr.Allen Wang View Contact Details

STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W

Brand Name	ST
Model Number	STGW80H65DFB
Place of Origin	Original
Minimum Order Quantity	5 pcs
Price	Negotiate
Payment Terms	T/T, Western Union, MoneyGram
Supply Ability	30000 pcs Per Month
Delivery Time	3-5 work days
Packaging Details	600 Pcs/box
Type	650V 80A IGBT Transistors
Description	IGBT Transistors 650V 80A 469W Field Stop
Package	TO-247-3
Packaging	Tube&Box
Shipping by	DHL\UPS\Fedex\EMS\HK Post\TNT
Lead time	3-5 Working days

Detailed Product Description

STGW80H65DFB Insulated Gate Bipolar Transistor 650V 80A 469W IGBT Transistors

Applications

• Photovoltaic inverters

• High frequency converters

Specifications

Product Attribute	Attribute Value
Manufacturer:	STMicroelectronics
Product Category:	IGBT Transistors
Technology:	Si
Package / Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, + 20 V
Continuous Collector Current at 25 C:	120 A
Pd - Power Dissipation:	469 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Continuous Collector Current Ic Max:	80 A
Gate-Emitter Leakage Current:	250 nA
Subcategory:	IGBTs
Unit Weight:	1.340411 oz

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A

• Tight parameter distribution

• Safe paralleling

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Shopping Guide

Shipping

Delivery period

For in-stock parts, orders are estimated to ship out in 3 days.
Once shipped, estimated delivery time depends on the below carriers you chose:
DHL Express, 3-7 business days.
DHL eCommerce,12-22 business days.
FedEx International Priority, 3-7 business days
EMS, 10-15 business days.
Registered Air Mail, 15-30 business days.

Shipping rates

After confirming the order, we will evaluate the shipping cost based on the weight of the goods

Shipping option

We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.

Shipping tracking

We will notify you by email with tracking number once order is shipped.

Returning

warranty

Returning

Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.

Warranty

All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation

Ordering

Payment

T/T,PayPal, Credit Card includes Visa, Master, American Express.

Product Tags: STGW80H65DFB IGBT Transistor Insulated Gate Bipolar Transistor 650V IGBT Transistor 469W

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