21 - 30 of 48
600v npn mosfet transistor
Selling leads
|
...-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, ...
2024-12-09 22:07:10
|
|
... •Simple drive requirements •Material categorization: for definitions of compliance DESCRIPTION Third generation Power MOSFETs from Vishay provide ...
2024-12-09 23:34:13
|
|
IRFP064NPBF N-Channel Mosfet 55V 98A 8mOhm 113.3nCAC TO-247-3 Specifications Product Attribute Attribute Value Product Category: MOSFET Technology: Si ...
2024-12-09 23:34:13
|
|
N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications • Switching applications ...
2024-12-09 22:07:10
|
|
IRFP4668PBF N-Channel MOSFET 130 A 200 V TO-247AC Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High ...
2024-12-09 23:34:13
|
|
Product Description: The RURG8060 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping ...
2024-12-09 23:34:13
|
|
NVMTS1D2N08H 80V 337A 1.1mOhms DFNW-8 AEC-Q101 N-Channel MOSFET Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize ...
2024-12-09 23:34:13
|
|
FGH40N60SFD Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new ...
2024-12-09 22:06:54
|
|
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar ...
2024-12-09 22:06:54
|
|
...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter ...
2024-12-09 22:06:54
|