IRFP9240PBF P-Channel MOSFET 200V 12A 500 mOhms TO-247-3 Transistors
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IRFP9240PBF P-Channel MOSFET 200V 12A TO-247-3 Transistors FEATURES •Dynamic dV/dt rating •Repetitive avalanche rated •P-channel •Isolated central mounting hole •Fast switching •Ease of paralleling •Simple drive requirements •Material categorization: for definitions of compliance DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = - 50 V, starting TJ = 25 °C, L = 8.2 mH, Rg = 25 Ω, IAS = - 12 A (see fig. 12) c. ISD ≤ - 12 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case Specifications
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IRFP9240PBF P-Channel MOSFET 200V 12A 500 mOhms TO-247-3 Transistors |
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