TK35N65W High Power Transistor 35A 650V
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Detailed Product Description
TK35N65W High Power Transistor 35A 650V Switching Voltage 270W 115nC 80 MOhms Power Supply Applications Switching Voltage Regulators DTMOSIV Series MOSFETsToshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators. Features (1) Fast reverse recovery time: trr = 130 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by used
to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 2.1 mA) Specifications
Trading Guide
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Product Tags: TK35N65W High Power Transistor High Power Transistor 35A |
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