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rf power transistors high output
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...Power Electronics High Performance Reliable Power Control Solution Product parameters: Type: MOSFET Model: IR2184STRPBF Package: PBF Vds: 600V Id: ...
2024-12-09 22:28:51
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...Power Electronics High Performance Low Voltage Single N Channel Logic Level Gate FET IRLML5103TRPBF MOSFET N-Channel 20V 4.2A (Tc) 25W (Tc) Surface ...
2024-12-09 22:28:51
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...High Power Capability: With a maximum drain current of 12A and a voltage ratingof 600v, the SIHF12N60E-E3 N-Channel Transistor is capable of ...
2024-12-09 22:28:51
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This listing is for one IRFR120NTRLPBF MOSFET Power Electronics. This is an N-channel enhancement mode silicon gate power field effect transistor. ...
2024-12-09 22:29:06
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...-Source Voltage: 600V • Continuous Drain Current: 8.2A • Drain-Source On-Resistance: 0.66ohm • Gate-Source Voltage: ±20V • Power Dissipation: 1.2W ...
2024-12-09 22:28:51
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Product Listing: IRF6775MTRPBF MOSFET Features & Benefits: • Maximum Drain Source Voltage (Vdss): 60 V • Rds On (Max) @ Id, Vgs: 0.039 Ohm @ 11A, 10V ...
2024-12-09 22:28:51
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IRF9Z34NSTRLPBF MOSFET Power Electronics High Performance Reliable Power Control Product Features: - N-Channel Enhancement Mode - Ultra Low On...
2024-12-09 22:28:51
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...Power Management IC with High Efficiency and Low Power Consumption Output Configuration Positive Output Type Fixed Number of Regulators 1 Voltage - ...
2024-12-09 22:30:41
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...Power Electronics High Voltage and High Current Capacity for High Efficiency Applications The SI3456DDV-T1-E3 is an advanced N-Channel Enhancement ...
2024-12-09 22:28:51
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Product: IRF2804PBF MOSFET Parameters: - Drain to Source Voltage (Vds): 500V - Drain Current (Id): 4.4A - Gate to Source Voltage (Vgs): +/- 20V - ...
2024-12-09 22:28:51
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