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rf power transistors high output
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... of applications. It has a low gate charge and low gate-to-drain capacitance and is suitable for high-frequency switching applications. It features ...
2024-12-09 22:28:51
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...Power Electronics High Power and Low On-Resistance for Maximum Efficiency Product Description: This is an N-Channel enhancement mode silicon gate ...
2024-12-09 22:28:51
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FCH072N60F MOSFET Power Electronics - High Efficiency and High Power Output for Industrial and Automotive Applications Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
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...Power Electronics High Performance Low-Power Solution Product Parameters: Drain-Source Voltage: 30V Continuous Drain Current: 30A Drain-Source On...
2024-12-09 22:28:51
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...Continuous Drain Current (ID): 5.5A 4. On-State Resistance (RDS(on)): 0.84Ω 5. Power Dissipation (PD): 9.2W 6. Operating Temperature: -55°C to 150...
2024-12-09 22:28:51
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... of 1.2 mΩ. Its low gate charge and fast switching speed make it ideal for high-current and high-frequency applications. Features: • Low RDS(on): 1...
2024-12-09 22:29:06
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...Power Electronics High Efficiency and Reliable Operation Product Description: The IRFL014TRPBF is a N-Channel Metal Oxide Semiconductor Field ...
2024-12-09 22:28:51
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IRFI4019H-117P MOSFET Power Electronics High Performance Low On Resistance Product Overview: The IRFI4019H-117P MOSFET is an N-channel enhancement ...
2024-12-09 22:29:06
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... • Maximum Gate-Source Voltage: -8V • Maximum Drain Current: -14A • Maximum Drain-Source On-State Resistance: 3.8Ω • Maximum Power Dissipation @ 25...
2024-12-09 22:29:06
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...RDS (on) of 0.0015Ω, an ID of 60A and an avalanche energy rating of 8mJ. Key Features: • N-Channel Power MOSFET • RDS (on) of 0.0015Ω • ID of 60A • ...
2024-12-09 22:28:51
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