IRFR120NTRLPBF Common Power Mosfet High Performance And Low RDS(On)

This listing is for one IRFR120NTRLPBF MOSFET Power Electronics. This is an N-channel enhancement mode silicon gate power field effect transistor. Features of the IRFR120NTRLPBF include:

• Drain-Source Voltage: 60V
• Continuous Drain Current: -11A
• Power Dissipation: 4.5W
• Operating Junction Temperature: -55°C to 175°C
• On Resistance RDS(ON): 0.042Ω
• Transistor Polarity: N-Channel
• Mounting Style: Surface Mount
• Package/Case: SOT-223
• Maximum Gate Threshold Voltage: 3.8V
• Maximum Drain-Source On-State Resistance: 0.042 Ohms
• Maximum Gate-Source Voltage: +/-20V
• Maximum Drain Current: -11A
• Minimum Single Pulse On-Time: 140ns
• Maximum Single Pulse On-Time: 5.5µs
• Operating Temperature Range: -55°C to 175°C

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