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low on resistance mosfet power electronics
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Product Listing: IPD096N08N3GATMA1 MOSFET Power Electronics Parameters: • Voltage: 900V • Power: 40A • RDSon: 0.0096 Ohm • Type: N-Channel • Package: ...
2024-12-09 22:29:06
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SQJ488EP-T1-BE3 MOSFET Power Electronics Ultra-Low On-Resistance High Efficiency and Reliability FET Type N-Channel Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
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... • Low Thermal Resistance Specifications: • Drain Source Voltage (VDS): 100V • Continuous Drain Current (ID): 56A • RDS (on): 0.03 Ohm • Transcondu...
2024-12-09 22:28:51
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... and efficiency for switching applications. Parameters: • Drain-Source Voltage: -60V • Drain Current: -24A • Gate-Source Voltage: ±20V • On...
2024-12-09 22:28:51
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...MOSFET High-Performance Power Electronics for Automotive and Industrial Applications Description: The IRFR6215TRPBF is an N-channel power MOSFET ...
2024-12-09 22:28:51
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... performance with low gate charge and low on-resistance. It is ideal for high-performance buck, boost, and inverting applications. Parameters: - ...
2024-12-09 22:28:51
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... power supply designs. This MOSFET features a low on-resistance of 0.037 Ω, a low gate charge of 16 nC, and a high peak current rating of 72 A. It ...
2024-12-09 22:29:06
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... superior switching performance and low on-state resistance. It is designed to meet the requirements of high power applications such as DC-DC ...
2024-12-09 22:29:06
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...Power MOSFET Features: • Low On-Resistance RDS(on) = 0.0095 ohm • Low Gate Charge Qg = 6.2 nC • High Drain Current Capability ID = 2.4A • Low Input ...
2024-12-09 22:29:06
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...MOSFET Description: The IRFB4332PBF is a high power MOSFET with a breakdown voltage of 500V and a continuous drain current of 4.5A. It has a fast ...
2024-12-09 22:29:06
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